- Product Model FDP4D5N10C
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 100V 128A TO220-3
- Classification Single FETs, MOSFETs
-
PDF
Inventory:2075
Pricing:
- 1 5.85
- 50 4.64
- 100 3.98
- 500 3.54
- 1000 3.03
- 2000 2.85
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 128A (Tc)
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
- Power Dissipation (Max) 2.4W (Ta), 150W (Tc)
- Vgs(th) (Max) @ Id 4V @ 310µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5065 pF @ 50 V