Technical Details

• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 282A (Tc)
• Rds On (Max) @ Id, Vgs 1.05mOhm @ 50A, 10V
• Power Dissipation (Max) 139W (Tc)
• Vgs(th) (Max) @ Id 2V @ 250µA
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 133 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 20 V