- Product Model SIS110DN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 100V 5.2A/14.2A PPAK
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.24
- 6000 0.23
- 9000 0.21
- 30000 0.21
Technical Details
- Package / Case PowerPAK® 1212-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 14.2A (Tc)
- Rds On (Max) @ Id, Vgs 54mOhm @ 4A, 10V
- Power Dissipation (Max) 3.2W (Ta), 24W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® 1212-8
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 50 V
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