- Product Model IRF8010PBF
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 100V 80A TO220AB
- Classification Single FETs, MOSFETs
-
PDF
- 1 2.1
- 50 1.69
- 100 1.39
- 500 1.17
- 1000 1
- 2000 0.95
- 5000 0.91
- 10000 0.88
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Rds On (Max) @ Id, Vgs 15mOhm @ 45A, 10V
- Power Dissipation (Max) 260W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3830 pF @ 25 V
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