- Product Model SISS26DN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 60V 60A PPAK1212-8S
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.67
- 6000 0.64
- 9000 0.61
Technical Details
- Package / Case PowerPAK® 1212-8S
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V
- Power Dissipation (Max) 57W (Tc)
- Vgs(th) (Max) @ Id 3.6V @ 250µA
- Supplier Device Package PowerPAK® 1212-8S
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 30 V
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