- Product Model SIHP11N80E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 800V 12A TO220AB
- Classification Single FETs, MOSFETs
-
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Inventory:1511
Pricing:
- 1 3.4
- 10 2.85
- 100 2.31
- 500 2.05
- 1000 1.76
- 2000 1.65
- 5000 1.59
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
- Power Dissipation (Max) 179W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 100 V
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