- Product Model IPD80R900P7ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 800V 6A TO252-3
- Classification Single FETs, MOSFETs
-
PDF
Inventory:6362
Pricing:
- 2500 0.55
- 5000 0.52
- 12500 0.5
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 110µA
- Supplier Device Package PG-TO252-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V