- Product Model SUG90090E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 200V 100A TO247AC
- Classification Single FETs, MOSFETs
-
PDF
- 1 4.23
- 25 3.35
- 100 2.87
- 500 2.55
- 1000 2.19
- 2000 2.06
- 5000 1.97
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 9.5mOhm @ 20A, 10V
- Power Dissipation (Max) 395W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-247AC
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 129 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 100 V
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