Inventory:3001
Pricing:
  • 1 6.17
  • 50 4.92
  • 100 4.41
  • 500 3.89
  • 1000 3.5
  • 2000 3.28

Technical Details

  • Package / Case TO-220-2
  • Mounting Type Through Hole
  • Speed No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr) 0 ns
  • Technology SiC (Silicon Carbide) Schottky
  • Capacitance @ Vr, F 310pF @ 1V, 1MHz
  • Current - Average Rectified (Io) 12A
  • Supplier Device Package PG-TO220-2-1
  • Operating Temperature - Junction -55°C ~ 175°C
  • Voltage - DC Reverse (Vr) (Max) 600 V
  • Voltage - Forward (Vf) (Max) @ If 2.1 V @ 12 A
  • Current - Reverse Leakage @ Vr 100 µA @ 600 V

Related Products


DIODE SIL CARB 600V 8A TO220-2-1

Inventory: 670

DIODE SIL CARB 650V 10A TO220-1

Inventory: 2389

DIODE SIL CARB 650V 27A TO220-2

Inventory: 582

DIODE SIL CARB 650V 20A TO220-1

Inventory: 864

MOSFET N-CH 500V 14A TO247-3

Inventory: 1492

MOSFET N-CH 500V 14A TO247AC

Inventory: 0

NCHAN, TO-247AC, 500V, 14A IRFP4

Inventory: 347

Top