- Product Model SISS98DN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 200V 14.1A PPAK
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.43
- 6000 0.41
- 9000 0.39
Technical Details
- Package / Case PowerPAK® 1212-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 14.1A (Tc)
- Rds On (Max) @ Id, Vgs 105mOhm @ 7A, 10V
- Power Dissipation (Max) 57W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® 1212-8
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 7.5 V
- Input Capacitance (Ciss) (Max) @ Vds 608 pF @ 100 V
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