Technical Details

• Package / Case Die
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 50A (Tj)
• Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
• Power Dissipation (Max) 313mW (Tj)
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package Die
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +25V, -5V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 90.8 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 1915 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)