- Product Model SCT2H12NYTB
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 1700V 4A TO268
- Classification Single FETs, MOSFETs
-
PDF
- 400 4.1
- 800 3.86
- 1200 3.3
- 2000 3.11
Technical Details
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Mounting Type Surface Mount
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V
- Power Dissipation (Max) 44W (Tc)
- Vgs(th) (Max) @ Id 4V @ 410µA
- Supplier Device Package TO-268
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -6V
- Drain to Source Voltage (Vdss) 1700 V
- Gate Charge (Qg) (Max) @ Vgs 14 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 184 pF @ 800 V
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