- Product Model IPN50R1K4CEATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 500V 4.8A SOT223
- Classification Single FETs, MOSFETs
-
PDF
Inventory:17799
Pricing:
- 3000 0.2
- 6000 0.19
- 9000 0.18
- 30000 0.17
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
- Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 13V
- Power Dissipation (Max) 5W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 70µA
- Supplier Device Package PG-SOT223-3
- Drive Voltage (Max Rds On, Min Rds On) 13V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 500 V
- Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 178 pF @ 100 V