- Product Model SIHD12N50E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 550V 10.5A DPAK
- Classification Single FETs, MOSFETs
-
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Inventory:4469
Pricing:
- 1 1.73
- 10 1.44
- 100 1.14
- 500 0.97
- 1000 0.82
- 3000 0.78
- 6000 0.75
- 12000 0.73
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TA)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
- Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
- Power Dissipation (Max) 114W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 550 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 886 pF @ 100 V
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