- Product Model SCT3120ALGC11
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 650V 21A TO247N
- Classification Single FETs, MOSFETs
-
PDF
- 1 8.8
- 30 7.02
- 120 6.28
- 510 5.54
- 1020 4.99
- 2010 4.68
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
- Power Dissipation (Max) 103W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 3.33mA
- Supplier Device Package TO-247N
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 38 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
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