- Product Model CSD19538Q2T
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET N-CH 100V 13.1A 6WSON
- Classification Single FETs, MOSFETs
-
PDF
- 250 0.79
- 500 0.68
- 1250 0.55
- 2500 0.52
- 6250 0.5
- 12500 0.47
Technical Details
- Package / Case 6-WDFN Exposed Pad
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13.1A (Tc)
- Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
- Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 250µA
- Supplier Device Package 6-WSON (2x2)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
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