- Product Model IRF135S203
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 135V 129A TO263-3
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1794
Pricing:
- 800 1.96
- 1600 1.68
- 2400 1.58
- 5600 1.51
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 129A (Tc)
- Rds On (Max) @ Id, Vgs 8.4mOhm @ 77A, 10V
- Power Dissipation (Max) 441W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PG-TO263-3-2
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 135 V
- Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 9700 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
MOSFET N-CH 30V 22A/70A TO252
In Stock: 25453
- 2500: 0.33
- 5000: 0.31
- 12500: 0.29
- 25000: 0.29
MOSFET N-CH 150V 130A D2PAK
In Stock: 8462
- 800: 3.23
- 1600: 2.76
- 2400: 2.6
MOSFET N-CH 100V 192A D2PAK
In Stock: 3055
- 800: 2.27
- 1600: 1.95
- 2400: 1.83
- 5600: 1.76
MOSFET N-CH 150V 130A TO263AA
In Stock: 1603
- 1: 9.48
- 50: 7.57
- 100: 6.77
- 500: 5.98
- 1000: 5.38
