- Product Model IRF630
- Brand STMicroelectronics
- RoHS Yes
- Description MOSFET N-CH 200V 9A TO220AB
- Classification Single FETs, MOSFETs
-
PDF
- 1 1.53
- 50 1.23
- 100 0.98
- 500 0.83
- 1000 0.67
- 2000 0.63
- 5000 0.6
- 10000 0.58
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -65°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
- Power Dissipation (Max) 75W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
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