- Product Model IPW65R110CFDAFKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 31.2A TO247-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 8.75
- 30 6.98
- 120 6.25
- 510 5.51
- 1020 4.96
- 2010 4.65
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
- Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
- Power Dissipation (Max) 277.8W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 1.3mA
- Supplier Device Package PG-TO247-3
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V
- Qualification AEC-Q101
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