- Product Model IPW65R065C7XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 33A TO247-3
- Classification Single FETs, MOSFETs
-
PDF
- 1 8.78
- 30 7.01
- 120 6.27
- 510 5.53
- 1020 4.98
- 2010 4.67
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Rds On (Max) @ Id, Vgs 65mOhm @ 17.1A, 10V
- Power Dissipation (Max) 171W (Tc)
- Vgs(th) (Max) @ Id 4V @ 850µA
- Supplier Device Package PG-TO247-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 400 V
Related Products
TRANS PNP 20V 3A SOT23
Inventory: 2889
TRANS PNP 20V 1.5A SOT23-3
Inventory: 27884
MOSFET N-CH 650V 33A TO220-3
Inventory: 499
MOSFET N-CH 650V 24A TO247
Inventory: 1286
MOSFET N-CH 650V 38A TO247-3
Inventory: 0
MOSFET N-CH 650V 42A TO247
Inventory: 90
DIODE GEN PURP 1.6KV 90A TO247AD
Inventory: 484
