- Product Model IPL65R650C6SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 6.7A THIN-PAK
- Classification Single FETs, MOSFETs
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Inventory:1500
Pricing:
- 5000 0.72
- 10000 0.7
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6.7A (Tc)
- Rds On (Max) @ Id, Vgs 650mOhm @ 2.1A, 10V
- Power Dissipation (Max) 56.8W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 210µA
- Supplier Device Package PG-TSON-8-2
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V