- Product Model IPD65R660CFDAATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 650V 6A TO252-3
- Classification Single FETs, MOSFETs
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Inventory:6087
Pricing:
- 2500 1
- 5000 0.96
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Rds On (Max) @ Id, Vgs 660mOhm @ 3.22A, 10V
- Power Dissipation (Max) 62.5W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 214.55µA
- Supplier Device Package PG-TO252-3
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 543 pF @ 100 V
- Qualification AEC-Q101