- Product Model IPU60R1K5CEAKMA2
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 600V 3.1A TO251-3
- Classification Single FETs, MOSFETs
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Technical Details
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
- Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V
- Power Dissipation (Max) 49W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 90µA
- Supplier Device Package PG-TO251-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
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