- Product Model SSM6J512NU,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET P-CH 12V 10A 6UDFNB
- Classification Single FETs, MOSFETs
-
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Inventory:4129
Pricing:
- 3000 0.12
- 6000 0.12
- 9000 0.1
- 30000 0.1
- 75000 0.1
Technical Details
- Package / Case 6-WDFN Exposed Pad
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 16.2mOhm @ 4A, 8V
- Power Dissipation (Max) 1.25W (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package 6-UDFNB (2x2)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 12 V
- Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 6 V
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