- Product Model TK17N65W,S1F
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 17.3A TO247
- Classification Single FETs, MOSFETs
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Inventory:1500
Pricing:
- 1 3.71
- 30 2.94
- 120 2.52
- 510 2.24
- 1020 1.92
- 2010 1.81
- 5010 1.73
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
- Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V
- Power Dissipation (Max) 165W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 900µA
- Supplier Device Package TO-247
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V