- Product Model TK17E65W,S1X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 17.3A TO220
- Classification Single FETs, MOSFETs
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Inventory:1500
Pricing:
- 1 2.99
- 50 2.37
- 100 2.03
- 500 1.81
- 1000 1.55
- 2000 1.46
- 5000 1.44
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
- Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V
- Power Dissipation (Max) 165W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 900µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V