- Product Model TK6Q65W,S1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 5.8A IPAK
- Classification Single FETs, MOSFETs
Inventory:1575
Pricing:
- 1 1.35
- 75 1.08
- 150 0.86
- 525 0.73
- 1050 0.59
- 2025 0.56
- 5025 0.53
- 10050 0.51
Technical Details
- Package / Case TO-251-3 Stub Leads, IPAK
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)
- Rds On (Max) @ Id, Vgs 1.05Ohm @ 2.9A, 10V
- Power Dissipation (Max) 60W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 180µA
- Supplier Device Package IPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 300 V
