- Product Model TK9P65W,RQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 9.3A DPAK
- Classification Single FETs, MOSFETs
Inventory:1500
Pricing:
- 2000 0.81
- 6000 0.78
- 10000 0.77
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.3A (Ta)
- Rds On (Max) @ Id, Vgs 560mOhm @ 4.6A, 10V
- Power Dissipation (Max) 80W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 350µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V