- Product Model CDM22010-650 SL
- Brand Central Semiconductor
- RoHS Yes
- Description MOSFET N-CH 650V 10A TO220
- Classification Single FETs, MOSFETs
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Inventory:1964
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
- Power Dissipation (Max) 2W (Ta), 156W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) 30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1168 pF @ 25 V