- Product Model SPD04N80C3ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 800V 4A TO252-3
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.73
- 5000 0.7
- 12500 0.68
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V
- Power Dissipation (Max) 63W (Tc)
- Vgs(th) (Max) @ Id 3.9V @ 240µA
- Supplier Device Package PG-TO252-3
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V
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