- Product Model BSP297H6327XTSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET N-CH 200V 660MA SOT223-4
- Classification Single FETs, MOSFETs
-
PDF
- 1000 0.38
- 2000 0.35
- 5000 0.34
- 10000 0.32
- 25000 0.32
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
- Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
- Power Dissipation (Max) 1.8W (Ta)
- Vgs(th) (Max) @ Id 1.8V @ 400µA
- Supplier Device Package PG-SOT223-4
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 357 pF @ 25 V
Related Products
MOSFET N-CH 250V TSON-8
Inventory: 9099
MOSFET P-CH 20V 2.3A TO236AB
Inventory: 7845
MOSFET N-CH 60V 1.8A SOT223-4
Inventory: 1956
MOSFET P-CH 250V 430MA SOT223-4
Inventory: 7204
MOSFET P-CH 100V 360MA SC59
Inventory: 14021
MOSFET N-CH 60V 230MA SOT23-3
Inventory: 40587
MOSFET N-CH 250V 790MA SOT223
Inventory: 3178
MOSFET N-CH 200V 1A SOT-223
Inventory: 12678
