- Product Model GA10SICP12-263
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description TRANS SJT 1200V 25A D2PAK
- Classification Single FETs, MOSFETs
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Inventory:1500
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Rds On (Max) @ Id, Vgs 100mOhm @ 10A
- Power Dissipation (Max) 170W (Tc)
- Supplier Device Package TO-263-7
- Drain to Source Voltage (Vdss) 1200 V
- Input Capacitance (Ciss) (Max) @ Vds 1403 pF @ 800 V