Technical Details

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 60A (Tc)
• Rds On (Max) @ Id, Vgs 1.9mOhm @ 25A, 10V
• Power Dissipation (Max) 2.3W (Ta)
• Vgs(th) (Max) @ Id 1.4V @ 250µA
• Supplier Device Package PowerDI5060-8 (Type K)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 585 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 12826 pF @ 10 V