- Product Model TPN4R712MD,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET P-CH 20V 36A 8TSON
- Classification Single FETs, MOSFETs
- 5000 0.29
- 10000 0.27
- 25000 0.27
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V
- Power Dissipation (Max) 42W (Tc)
- Vgs(th) (Max) @ Id 1.2V @ 1mA
- Supplier Device Package 8-TSON Advance (3.1x3.1)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 65 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
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