- Product Model NTP8G202NG
- Brand Sanyo Semiconductor/onsemi
- RoHS No
- Description GANFET N-CH 600V 9A TO220-3
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1500
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Cascode Gallium Nitride FET)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 350mOhm @ 5.5A, 8V
- Power Dissipation (Max) 65W (Tc)
- Vgs(th) (Max) @ Id 2.6V @ 500µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 8V
- Vgs (Max) ±18V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V