Technical Details

• Package / Case 3-WDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 440mV @ 100mA, 1A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V
• Frequency - Transition 200MHz
• Supplier Device Package 3-WDFN (2x2)
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 12 V
• Power - Max 740 mW