Technical Details

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Ta)
• Rds On (Max) @ Id, Vgs 15mOhm @ 3A, 10V
• Power Dissipation (Max) 2.7W (Ta)
• Vgs(th) (Max) @ Id 1V @ 250µA (Min)
• Supplier Device Package 8-SOIC
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 3525 pF @ 25 V