- Product Model CSD19536KTTT
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET N-CH 100V 200A DDPAK
- Classification Single FETs, MOSFETs
- 50 4.99
- 100 4.27
- 250 4.04
- 500 3.8
- 1250 3.25
- 2500 3.06
Technical Details
- Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 200A (Ta)
- Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
- Power Dissipation (Max) 375W (Tc)
- Vgs(th) (Max) @ Id 3.2V @ 250µA
- Supplier Device Package TO-263 (DDPAK-3)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 50 V
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