- Product Model SI8410DB-T2-E1
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 20V 4MICRO FOOT
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.42
- 6000 0.4
- 9000 0.39
Technical Details
- Package / Case 4-UFBGA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.8A (Ta)
- Rds On (Max) @ Id, Vgs 37mOhm @ 1.5A, 4.5V
- Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
- Vgs(th) (Max) @ Id 850mV @ 250µA
- Supplier Device Package 4-Micro Foot (1x1)
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 10 V
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