- Product Model IXTA1N200P3HV
- Brand Littelfuse / IXYS RF
- RoHS Yes
- Description MOSFET N-CH 2000V 1A TO263
- Classification Single FETs, MOSFETs
-
PDF
- 1 9.41
- 50 7.51
- 100 6.72
- 500 5.93
- 1000 5.34
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 1A (Tc)
- Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263AA
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 2000 V
- Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V
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