- Product Model TPW4R008NH,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 80V 116A 8DSOP
- Classification Single FETs, MOSFETs
Inventory:1500
Pricing:
- 5000 1.13
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 116A (Tc)
- Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
- Power Dissipation (Max) 800mW (Ta), 142W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package 8-DSOP Advance
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 40 V