Technical Details

• Package / Case 8-CDIP Exposed Pad
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
• Power Dissipation (Max) 50W (Tj)
• Vgs(th) (Max) @ Id 2.4V @ 100µA
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) 10V
• Drain to Source Voltage (Vdss) 55 V
• Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V