- Product Model SIHP33N60EF-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 600V 33A TO220AB
- Classification Single FETs, MOSFETs
-
PDF
- 1 4.31
- 50 3.44
- 100 3.19
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Rds On (Max) @ Id, Vgs 98mOhm @ 16.5A, 10V
- Power Dissipation (Max) 278W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220AB
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3454 pF @ 100 V
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