Technical Details

• Package / Case 14-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Transistor Type 4 NPN (Quad)
• Operating Temperature -65°C ~ 150°C (TJ)
• Power - Max 650mW
• Current - Collector (Ic) (Max) 500mA
• Voltage - Collector Emitter Breakdown (Max) 40V
• Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max) 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
• Frequency - Transition 200MHz
• Supplier Device Package TO-116