- Product Model CSD23202W10
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET P-CH 12V 2.2A 4DSBGA
- Classification Single FETs, MOSFETs
- 3000 0.13
- 6000 0.13
- 9000 0.11
- 30000 0.11
- 75000 0.1
Technical Details
- Package / Case 4-UFBGA, DSBGA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
- Rds On (Max) @ Id, Vgs 53mOhm @ 500mA, 4.5V
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Supplier Device Package 4-DSBGA (1x1)
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs (Max) -6V
- Drain to Source Voltage (Vdss) 12 V
- Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 512 pF @ 6 V
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