- Product Model RS1E200GNTB
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET N-CH 30V 20A 8HSOP
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.31
- 5000 0.29
- 12500 0.27
- 25000 0.27
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 20A (Ta), 57A (Tc)
- Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
- Power Dissipation (Max) 3W (Ta), 25W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-HSOP
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 15 V
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