- Product Model RF4E110BNTR
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET N-CH 30V 11A HUML2020L8
- Classification Single FETs, MOSFETs
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Inventory:2466
Pricing:
- 3000 0.25
- 6000 0.24
- 9000 0.22
- 30000 0.22
Technical Details
- Package / Case 8-PowerUDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Ta)
- Rds On (Max) @ Id, Vgs 11.1mOhm @ 11A, 10V
- Power Dissipation (Max) 2W (Ta)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package HUML2020L8
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 15 V