Technical Details

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 54mA (Tj)
• Rds On (Max) @ Id, Vgs 125Ohm @ 10mA, 10V
• Power Dissipation (Max) 1W (Tc)
• Vgs(th) (Max) @ Id 4.5V @ 1mA
• Supplier Device Package TO-92-3
• Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 500 V
• Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 25 V