Technical Details

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 100mA (Tj)
• Rds On (Max) @ Id, Vgs 30Ohm @ 100mA, 10V
• Power Dissipation (Max) 740mW (Ta)
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Supplier Device Package TO-92-3
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 500 V
• Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V