- Product Model SSM6H19NU,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 40V 2A 6UDFN
- Classification Single FETs, MOSFETs
-
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Inventory:50277
Pricing:
- 3000 0.1
- 6000 0.09
- 9000 0.08
- 30000 0.08
- 75000 0.08
Technical Details
- Package / Case 6-UDFN Exposed Pad
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Ta)
- Rds On (Max) @ Id, Vgs 185mOhm @ 1A, 8V
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 1.2V @ 1mA
- Supplier Device Package 6-UDFN (2x2)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 2.2 nC @ 4.2 V
- Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 10 V
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